Breakdown of Corner States and Carrier Localization by Monolayer Fluctuations in Radial Nanowire Quantum Wells
نویسندگان
چکیده
منابع مشابه
Electromechanical Performance of NEMS Actuator Fabricated from Nanowire under quantum vacuum fluctuations using GDQ and MVIM
The Casimir attraction can significantly interfere the physical response of nanoactuators. The intensity of the Casimir force depends on the geometries of interacting bodies. The present paper is dedicated to model the influence of the Casimir attraction on the electrostatic stability of nanoactuators made of cylindrical conductive nanowire/nanotube. An asymptotic solution, based on path-integr...
متن کاملObservation of subsurface monolayer thickness fluctuations in InGaN/GaN quantum wells by scanning capacitance microscopy and spectroscopy
Scanning capacitance microscopy and spectroscopy combined with numerical simulations have been used to image nanoscale electronic structures in In0.30Ga0.70N/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition. Macroscopic capacitance– voltage spectroscopy and numerical simulations indicate that, depending on the bias voltage applied, either electron or hole accumu...
متن کاملCarrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
Carrier localization phenomena in indium-rich InGaN/GaN multiple quantum wells (MQWs) grown on sapphire and GaN substrates were investigated. Temperature-dependent photoluminescence (PL) spectroscopy, ultraviolet near-field scanning optical microscopy (NSOM), and confocal time-resolved PL (TRPL) spectroscopy were employed to verify the correlation between carrier localization and crystal qualit...
متن کاملEXCITON LOCALIZATION IN InGaN/GaN QUANTUM WELLS
Time-resolved cathodoluminescence (CL) techniques have been employed to examine the optical properties and kinetics of carrier relaxation in a InGaN/GaN single quantum well (QW) sample. CL images of the QW sample revealed a spotty cellular pattern indicative of local In compositional variations, which induce local potential fluctuations and result in a strong lateral excitonic localization at I...
متن کاملINFLUENCE OF Si-DOPING ON CARRIER LOCALIZATION OF MOCVD-GROWN InGaN/GaN MULTIPLE QUANTUM WELLS
We have systematically studied the influence of Si doping on the optical characteristics of InGaN/GaN multiple quantum wells (MQWs) using photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy combined with studies of optically pumped stimulated emission and structural properties from these materials. The MQWs were grown on 1.8-μm-thick GaN layers on c-plane sapphire fil...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nano Letters
سال: 2019
ISSN: 1530-6984,1530-6992
DOI: 10.1021/acs.nanolett.9b01028